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https://designers-guide.org/forum/YaBB.pl Modeling >> Passive Devices >> Setup material for N-well (in Standard CMOS Proces https://designers-guide.org/forum/YaBB.pl?num=1202798606 Message started by neoflash on Feb 11th, 2008, 10:43pm |
Title: Setup material for N-well (in Standard CMOS Proces Post by neoflash on Feb 11th, 2008, 10:43pm Hi, folks: I've problem with setting up N-well material in HFSS. The relative permitivity and conductivity and other parameter setting in HFSS material manager sounds unfamalier with me. Can people help on this? Neo |
Title: Re: Setup material for N-well (in Standard CMOS Pr Post by didac on Feb 12th, 2008, 1:13am Hi neoflash, You are using a EM simulator so you must look for magnetic/electric characteristics of the material. For example the two cuantities that you mention are defined as: http://www.microwaves101.com/encyclopedia/permeability.cfm http://www.microwaves101.com/encyclopedia/permittivity.cfm Hope it helps, |
Title: Re: Setup material for N-well (in Standard CMOS Pr Post by neoflash on Feb 12th, 2008, 5:42am Thanks for the info. I think N-well is still silicon, thus I will use silicon's parameter for it. |
Title: Re: Setup material for N-well (in Standard CMOS Pr Post by didac on Feb 12th, 2008, 9:50am Hi, I agree with you to use data from silicon except for the conductivity, that I think that is doping dependant. |
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