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Modeling >> Semiconductor Devices >> Some issues regarding MOSFET parameters
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Message started by AMSA on Feb 6^th, 2014, 4:05am

Title: Some issues regarding MOSFET parameters
Post by AMSA on Feb 6^th, 2014, 4:05am

Hi guys,

I am starting with Cadence and I am using UMC 0.13um technology. Right now I'm trying to get the MOSFET parameters like Kn, Vt, Tox, Φf, γn, Cgs, μn and Cox.

We know that Cox = εox/tox;
Question: We can get tox from the technology MOSFET model? I am right now with the pdf open and in the page where I can read Tox extraction. This is the value that I should use? The graph is plotted CGG(F) against VGS(V).

If so, from here I can get Cox, taking into account that εox=εr x εo where εr =3,97 (for SiO2) and εo=8.85E-18 F/um.

Now to calculate Cgs, I've to use this expression? Cgs=2/3 W L Cox?

Now I can get the μn, from the Ids equation.

Please correct me if I am wrong and how can I get the Kn, Φf and γn?

Thanks in advance.

Regards.

Title: Re: Some issues regarding MOSFET parameters
Post by aaron_do on Feb 6^th, 2014, 5:57pm

Hi,

you should be able to get approximations for the parameters you want. But the actual device model is quite different and more complex than what you will find in your textbook. If you're using the BSIM model, this book will come in handy,

http://www.amazon.com/MOSFET-Models-SPICE-Simulation-Including/dp/0471396974

its worth reading the first couple of chapters anyway.

Aaron