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Modeling >> Semiconductor Devices >> TCAD Sentaurus - incomplete ionization
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Message started by imad on Sep 12th, 2014, 8:30am

Title: TCAD Sentaurus - incomplete ionization
Post by imad on Sep 12th, 2014, 8:30am

I'm trying to simulate a pDBR structure of AlGaAs with the incomplete ionization model activated. While activating the model itself affects the simulation result and I see the doping concentration and IV curve affected, changing the model parameters ("Ionization") of the AlGaAs materials seems not to be taken into account. I made sure that in the log file the standard values (called "Shallow Trap") are actually replaced by the values I provide, but still they have no effect whatsoever on the result. I'm suspecting the model all together is faulty in Sentaurus. any ideas?
thanks!

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