The Designer's Guide Community Forum
https://designers-guide.org/forum/YaBB.pl Modeling >> Semiconductor Devices >> TCAD Sentaurus - incomplete ionization https://designers-guide.org/forum/YaBB.pl?num=1410535859 Message started by imad on Sep 12th, 2014, 8:30am |
Title: TCAD Sentaurus - incomplete ionization Post by imad on Sep 12th, 2014, 8:30am I'm trying to simulate a pDBR structure of AlGaAs with the incomplete ionization model activated. While activating the model itself affects the simulation result and I see the doping concentration and IV curve affected, changing the model parameters ("Ionization") of the AlGaAs materials seems not to be taken into account. I made sure that in the log file the standard values (called "Shallow Trap") are actually replaced by the values I provide, but still they have no effect whatsoever on the result. I'm suspecting the model all together is faulty in Sentaurus. any ideas? thanks! |
The Designer's Guide Community Forum » Powered by YaBB 2.2.2! YaBB © 2000-2008. All Rights Reserved. |