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Modeling >> Semiconductor Devices >> Kink effect in SOI floating body devices
https://designers-guide.org/forum/YaBB.pl?num=1438471901

Message started by rfmagic on Aug 1^st, 2015, 4:31pm

Title: Kink effect in SOI floating body devices
Post by rfmagic on Aug 1^st, 2015, 4:31pm

Hi,

I am working with PD SOI devices (Partially Depleted Silicon on insulator) and I see a strange behavior in the I-V curves of the devices.
In general I know that in partially depleted SOI devices the floating body is susceptible to what is called the 'kink' effect which is an abrupt discontinuity in the I-V curve due to the changing threshold voltage. One way to solve this issue (with limited conditions) is using body-connected devices which enables a discharge path to the body of the devices and thus avoid the kink effect.
When I simulate both devices i.e. a floating-body device VS a body-connected device (body connected to GND) I get the opposite behavior. I see the kink-effect in the body-connected device and a smooth I-V curve in the floating body device. please see attached plots.

1. Does anyone have some experience with this kind of process and familiar with the I-V curves?
2. Am I missing something here?
3. Could it be that the models I am using are wrong? i.e. flipped models?

Thanks in advance

Title: Re: Kink effect in SOI floating body devices
Post by rfmagic on Aug 1^st, 2015, 4:32pm

The first plot in the first post shows the body-connected device

the plot in this plot shows the floating body device