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Design >> Analog Design >> Noise in Subthreshold Vs. Deep-inversion region of MOSFET
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Message started by jdp on Nov 16^th, 2017, 7:05pm

Title: Noise in Subthreshold Vs. Deep-inversion region of MOSFET
Post by jdp on Nov 16^th, 2017, 7:05pm

Hi.

Is the device (thermal/shot & Flicker) noise more in Subthreshold region of operation Vs. Strong-inversion of a MOSFET? (assuming same bias current is used in both the regions).

Any practical observation from your simulation experience?

[theoretical expressions in pic below: from http://www.cppsim.com/CircuitLectures/Lecture16.pdf ]