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Design >> Analog Design >> Paper showing evolution of intrinsic gain vs. min. channel length?
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Message started by spectrallypure on Dec 17^th, 2018, 4:12am

Title: Paper showing evolution of intrinsic gain vs. min. channel length?
Post by spectrallypure on Dec 17^th, 2018, 4:12am

Hi! Does anybody know of any recent paper/book showing the evolution of transistor intrinsic gain (gm*ro) with minimum channel length (=technology node)?

So far I've only found the graph below [1], but I'm looking for other references showing the same trend (i.e. that things get better in 22nm and below (FinFETs)).

Thanks in advance for any help!

[1] Holt, "Moore’s Law: A Path Going Forward", ISSCC'16

Title: Re: Paper showing evolution of intrinsic gain vs. min. channel length?
Post by DanielLam on Dec 17^th, 2018, 1:09pm

That gmro increase is due to a higher gm and higher ro of the finfet devices.

I think you should look at the ft of the devices as well. Finfets tend to have more gate capacitance than the bulk devices. So, while the gmro tends to be higher, the transition frequency (ft) might be worse.

Title: Re: Paper showing evolution of intrinsic gain vs. min. channel length?
Post by vroy_92 on Dec 29^th, 2018, 4:15pm

A more important parameter would be fmax. fT is more like a parameter technologists use, the real story is told by the fmax.