buddypoor
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Hi, Julian ! In fact, there are three small-signal parameters for the transconductance g: 1.) The mutual transconductance measures the amount of drain current increase caused by the increment in the gate bias: 2.) The drain transconductance measures the amount of drain current increase caused by the increment in the drain bias. 3.) Finally, the bulk transconductance consideres the effect of back-gate bias on the drain current
Perhaps, the g values corresponding to 2) resp. 3) are not included in the g-calculation of the simulator. In this context it is, of course, important whether you are simulating the pure MOSFET or the MOSFET with a load resistance. Moreover, there may be a difference between an "intrinsic" transconductance and the transconductance measured between the terminals of the DUT (influence of internal resistances). Finally, here is a good reference fpr MOS-modelling: iwailab.ep.titech.ac.jp/pdf/mnakagawa/mnakagawa_mthesis.pdf
Regards Lutz[size=12][/size]
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