Hi,
I am designing a charge pump circuit with thin oxide transistors with supply voltage 1.2 V, But, I am getting almost double output if I design the charge pump with thick-oxide transistors than the design with thin-oxide transistors.
My question is why this thing happen? and which transistor model is ideal for designing a charge pump circuit to work for a high voltage generator.  And for an EEPROM how much high voltage is required for the write operation.