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Kink effect in SOI floating body devices (Read 2861 times)
rfmagic
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Kink effect in SOI floating body devices
Aug 01st, 2015, 4:31pm
 
Hi,

I am working with PD SOI devices (Partially Depleted Silicon on insulator) and I see a strange behavior in the I-V curves of the devices.
In general I know that in partially depleted SOI devices the floating body is susceptible to what is called the 'kink' effect which is an abrupt discontinuity in the I-V curve due to the changing threshold voltage. One way to solve this issue (with limited conditions) is using body-connected devices which enables a discharge path to the body of the devices and thus avoid the kink effect.
When I simulate both devices i.e. a floating-body device VS a body-connected device (body connected to GND) I get the opposite behavior. I see the kink-effect in the body-connected device and  a smooth I-V curve in the floating body device. please see attached plots.

1. Does anyone have some experience with this kind of process and familiar with the I-V curves?
2. Am I missing something here?
3. Could it be that the models I am using are wrong? i.e. flipped models?

Thanks in advance

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Connected_body.JPG
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rfmagic
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Re: Kink effect in SOI floating body devices
Reply #1 - Aug 1st, 2015, 4:32pm
 
The first plot in the first post shows the body-connected device

the plot in this plot shows the floating body device
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Floating_Body.JPG
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