Andrew Beckett wrote on Jan 12th, 2019, 7:58am:You wouldn't expect mos1 to be the same as bsim3v3 to be the same as bsim4,
so why should different diode models behave the same way?
Such variations don't exist for PN-Diode and Gummel-Poon-BJT.
There are two options for model selector of PN-Diode in Cadence Spectre at most.
Quote:The DIODE level-1 model is based on the junction (Berkeley-spice) model
and the level-2 model is based on the Fowler-Nordheim model.
1 level=1 ; Model selector.
1 = Junction,
2 = Fowler-Nordheim,
3 = Junction + additional metal and polysilicon capacitances.
4 compatible=spectre ; Spice compatibility flag.
Possible values are
spectre, spice2, spice3, cdsspice, hspice,
spiceplus, eldo, sspice, mica, tispice, and pspice.
I choose compatible=spice2 and level=1, so diode model has to be same as spice model.
Andrew Beckett wrote on Jan 12th, 2019, 7:58am:Even the diode_sch VerilogA model and the diode.va model on this site are different (they have a lot of similarities, but they are different).
They give completely same DC characteristics.
Only Spectre diode model give different DC characteristics.
Discrepancies exist for forward small current region anf large current region.
Latter might be due to
"3 bv_enable=1 ; Flag to enable the breakdown of diode.
1=breakdown effect enabled,
0=breakdown effect disabled."