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https://designers-guide.org/forum/YaBB.pl Modeling >> Semiconductor Devices >> carrier concentration for equilibrium and perturbe https://designers-guide.org/forum/YaBB.pl?num=1064145207 Message started by jason_class on Sep 21st, 2003, 4:53am |
Title: carrier concentration for equilibrium and perturbe Post by jason_class on Sep 21st, 2003, 4:53am Hello Geoffrey and All, I am not very sure about intrinsic carrier concentration ni. For any given temperature, the ni X ni = constant? Let's say for Temperature T1, the electron concentration carrier is n1 while hole concentration carrier is p1 then p1 X n1 = ni X ni Then Temperature T2, the electron concentration carrier is n2 while hole concentration carrier is p2 then p2 X n2 = ni X ni then for any Temperature Tx, px X nx is always equal to ni X ni , is it correct? Case 2 When a p type Silicon(with dopant 10e17) is excite by light, the electron concentration n(initial) will increase to some n(excite) value. Is it true that n(initial) X 10e17 = ni X ni then n(excite) X 10e17 = ni X ni So it is true that for any time decay for carrier concentration the n(excite1,2,3,..) X 10e17 = ni X ni =n(initial) X 10e17 ? Thank you for any help given. rgds jason |
Title: Re: carrier concentration for equilibrium and pert Post by Geoffrey_Coram on Sep 23rd, 2003, 1:40pm jason_class wrote on Sep 21st, 2003, 4:53am:
Let's write ni2(T). When you write p1 X n1 = ni X ni and then p2 X n2 = ni X ni, you've lost the temperature dependence. p(T) X n(T) = ni2(T) always. Quote:
No, that's not right, because that would imply n(initial) = n(excite). Start with p(T) X n(T) = ni2(T) Initially, n(T) = n(initial) and p(T) = 10e17. After excitation, n(T) = n(excite), but p(T) = ? -Geoffrey |
Title: Re: carrier concentration for equilibrium and pert Post by jason_class on Sep 26th, 2003, 7:32pm Thank you Geoffrey! |
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