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Modeling >> Semiconductor Devices >> spreading on VBE for a bipolar
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Message started by horizon on May 23rd, 2006, 8:46am

Title: spreading on VBE for a bipolar
Post by horizon on May 23rd, 2006, 8:46am

Hello,
I would like to have a piece of advice for a small problem i have.
here it is.
I am using model for bipolar pnp transistor, those transistors are horizontal device that we get for free, I mean
they are not optimized . the beta is rather low.
The sigma on the Vbe that I calculate is about 20uV...using sigma=Avbe/sqrt(WL)
is it possible?
I mean, for a vbe which is changing by 2mV/°C it means that the measurments have been done on bipolar with less that 0.01 °C difference (without considering the mismatch caused by process....)
does somebody can give me a value for AVBE ?
thank you a lot for feedback
                               Horizon

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