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https://designers-guide.org/forum/YaBB.pl Modeling >> Semiconductor Devices >> latch up failure https://designers-guide.org/forum/YaBB.pl?num=1160065716 Message started by jason_class on Oct 5th, 2006, 9:28am |
Title: latch up failure Post by jason_class on Oct 5th, 2006, 9:28am Dear All Anyone can help to give some idea what could have cause latch up failure ? It is often mentioned the resistance of well are higher than normal. Am I right? Other than well resistance, what is the other possible factor that contribute to latch up on mos devices? Kindly enlighten Thank you best rgds Jason |
Title: Re: latch up failure Post by loose-electron on Oct 17th, 2006, 1:58pm current thru the bulk, leads to an IR drop across the bulk, get that voltage drop above the Vbe voltage and you turn a parasitic transistor on. Only got 2 variables to work with here I and R... There's a lot of stuff out there on this. Google it. |
Title: Re: latch up failure Post by jason_class on Oct 20th, 2006, 11:54pm Dear Loose e- Thank you for the comment. I saw the other posting where you introduce a link to fairchild document. It is interesting to read..I have some doubts with the document. I shall write back later. Jason |
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