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The Designer's Guide Community Forum
https://designers-guide.org/forum/YaBB.pl Modeling >> Semiconductor Devices >> RSCE https://designers-guide.org/forum/YaBB.pl?num=1168499651 Message started by sivacharan on Jan 10th, 2007, 11:14pm |
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Title: RSCE Post by sivacharan on Jan 10th, 2007, 11:14pm Can any one explain simply the physics behind the Reverse Short Channel Effect?? Thanks. |
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Title: Re: RSCE Post by Geoffrey_Coram on Jan 11th, 2007, 11:45am Same question came up in this thread: http://www.designers-guide.org/Forum/YaBB.pl?num=1164621927 |
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Title: Re: RSCE Post by mc66 on Jan 13th, 2007, 3:22am it's because halo implant,which is use to prevent punch through when L decrease,and before SCE take effect,the halo implant will make the effect doping of sub rise,so vt rise |
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Title: Re: RSCE Post by Croaker on Jan 15th, 2007, 4:40pm mc66 wrote on Jan 13th, 2007, 3:22am:
Perhaps I can clarify...and see if I understand... There is a p-type halo implant around the s/d. This high p-doping decreases the width of the depletion region, thus making it harder for the depletion regions of the s/d to touch, which is important when the channel is short. For long-channel devices, the halo implant is a pretty insignificant portion of the p-type substrate doping. As the channel shrinks, more of the channel consists of this high p implant, and thus the threshold voltage increases (the charge concentration is higher). Makes sense to me. :) |
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Title: Re: RSCE Post by mc66 on Jan 17th, 2007, 4:42am Croaker wrote on Jan 15th, 2007, 4:40pm:
you are right,and express clearly.i'm chinese,so express something use english is difficult to me |
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Title: Re: RSCE Post by Croaker on Jan 17th, 2007, 6:30am No problem. |
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