The Designer's Guide Community Forum
https://designers-guide.org/forum/YaBB.pl Design >> High-Power Design >> The source region is wider than the drain for powe https://designers-guide.org/forum/YaBB.pl?num=1180515994 Message started by dandelion on May 30th, 2007, 2:06am |
Title: The source region is wider than the drain for powe Post by dandelion on May 30th, 2007, 2:06am Hi, I found for some MOS Tr at output power stage, the source diffusion region is wider than that of the drain. E.g., I ever saw for a class d power amp output stage, the width of source is ~2.1um while the drain is 1.1um. Would anyone pls. tell me why? Thanks |
Title: Re: The source region is wider than the drain for Post by krishnap on May 31st, 2007, 2:47am One type of devices used in the power Management blocks is extended drain devices , in this case Drain will have additional area of diffusion compared to the source. This terminal can handle high volatge/field and breakdown limit is more. In this case source and drain dimensions are not the same. Could you verify whether it is this type of device or something else? Best regards, Krishna |
The Designer's Guide Community Forum » Powered by YaBB 2.2.2! YaBB © 2000-2008. All Rights Reserved. |