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https://designers-guide.org/forum/YaBB.pl Modeling >> Semiconductor Devices >> Bandgap (Si, Ge, etc.) variation with temp/pressur https://designers-guide.org/forum/YaBB.pl?num=1190278907 Message started by vivkr on Sep 20th, 2007, 2:01am |
Title: Bandgap (Si, Ge, etc.) variation with temp/pressur Post by vivkr on Sep 20th, 2007, 2:01am Hi, I was wondering if one could get a physical explanation for the variation of the bandgap of a semiconductor with temperature and pressure. Could someone provide an explanation for these please? Most semiconductors (Si, Ge, GaAs) show a bandgap reduction as temperature increases. Should one visualize this as occuring due to increased lattice vibration and the resulting reduction in energy required for an electron to jump from the outer orbitals to the free electron gas in the middle of the gaps, or is the explanation different? One exception is PbS whose bandgap increases. Pressure would intuitively seem to do the same, bringing atoms in the lattice closer and reducing bandgap. Is this really the case? Thanks & Regards Vivek |
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