The Designer's Guide Community Forum

The Designer's Guide Community Forum
https://designers-guide.org/forum/YaBB.pl
Modeling >> Semiconductor Devices >> BSIM4 model
https://designers-guide.org/forum/YaBB.pl?num=1195489407

Message started by tariavo on Nov 19^th, 2007, 8:23am

Title: BSIM4 model
Post by tariavo on Nov 19^th, 2007, 8:23am

Hi everybody!
I have 3 questions:
1.
I try calculating MOSFET params outside any tool and use BSIM4 model, but encountered the "cut" equation(see pictures): does anybody have the rest of equation?

2.
In the BSIM4 manual the term Cdep is used, but there is no definition. It seems to be capacitance of depletion region in channel but How is it calculated?

3.
Is it possible to calculate power leakage with the aid of HSIM ("HSIMplus 2005.02.7") ? (for instance: power leakage of cell NAND)

Thanks for reply!

Title: Re: BSIM4 model
Post by Geoffrey_Coram on Nov 20^th, 2007, 9:34am

1.
Check the slides from the BSIM group's report to the Compact Model Council in 2006:
http://www.eigroup.org/cmc/minutes/4q06_presentations/cmc_2006q4_bsim.pdf

The full equations are on page 7 of that PDF.

Title: Re: BSIM4 model
Post by Marq Kole on Mar 19^th, 2008, 1:50pm

Hi Tariavo,

In my experience the BSIM manuals contain many mistakes. Only by careful reading it is possible to put together the picture of what the equation actually should be. It would be nice if with a next update the BSIM group would also clean up the documentation.

The best approach to find Cdep is to try to find it in the BSIM4 source code and see where it gets its value.

Cheers,
Marq