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https://designers-guide.org/forum/YaBB.pl Design >> Analog Design >> The scale down factor https://designers-guide.org/forum/YaBB.pl?num=1196061480 Message started by jimwest on Nov 25th, 2007, 11:17pm |
Title: The scale down factor Post by jimwest on Nov 25th, 2007, 11:17pm I'm preparing for a project proposal about Giga ethernet PHY. I have to estimate a area shrink factor, from the 0.13 to 65nm cmos process. I don't have the experience in 65nm, so could you guys give me some hits. Thanx!! B/R, Jim |
Title: Re: The scale down factor Post by ACWWong on Nov 28th, 2007, 3:41am digital synthesized cell "should" reduce by factor 4 due to factor 2 reduction in channel length, but this might not be the case for your techonlogy due to the back-end (metals, vias etc.) not scaling effectively. A good way to estimate is to compare the area of a standard cell (e.g a NAND or flip-flip) between 0.13u and 65nm... of course "analog" circuits won't shrink that much, especially if using spiral inductors or other passives... |
Title: Re: The scale down factor Post by jimwest on Nov 28th, 2007, 7:10pm Hi, If the area is not that directly related to the process for analog, then how about the power consumption? Suppose that case 1 the supply voltage doesn't change, how about the power consumption for the 65nm process? case 2 the supply voltage reduced, how about the power consumption for 65nm process? B/R, Jim |
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