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Modeling >> Semiconductor Devices >> extracting BJT parameters for parasitic BJTs
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Message started by vivkr on Mar 14^th, 2008, 12:31am

Title: extracting BJT parameters for parasitic BJTs
Post by vivkr on Mar 14^th, 2008, 12:31am

Hi,

I want to extract crude models for parasitic BJTs with IS, & BF more than sufficient for my task. How can I do this?
I know the doping of the wells and the spacings etc. However, the textbook formula requires knowledge of
the diffusion coefficients or alternatively minority carrier mobilities which I have no way of estimating.

Or is there a good way? I only want a crude overview of the behavior. Any tips will be useful.

Regards
Vivek

Title: Re: extracting BJT parameters for parasitic BJTs
Post by Geoffrey_Coram on Mar 17^th, 2008, 12:43pm

Page 33 of my edition of Muller & Kamins has a plot of mobility as a function of dopant density for 3 dopants (As, B, P); there's also an equation and some tabulated values.

Title: Re: extracting BJT parameters for parasitic BJTs
Post by vivkr on Mar 18^th, 2008, 6:14am

Geoffrey_Coram wrote on Mar 17^th, 2008, 12:43pm:

Page 33 of my edition of Muller & Kamins has a plot of mobility as a function of dopant density for 3 dopants (As, B, P); there's also an equation and some tabulated values.

Too bad! That's one book I don't have. Will look around to see if someone has a copy.

Thanks
Vivek