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https://designers-guide.org/forum/YaBB.pl Modeling >> Semiconductor Devices >> Monte Carlo in subthreshold region of operation https://designers-guide.org/forum/YaBB.pl?num=1235102894 Message started by skywalker_1 on Feb 19th, 2009, 8:08pm |
Title: Monte Carlo in subthreshold region of operation Post by skywalker_1 on Feb 19th, 2009, 8:08pm Hi I have a sort of doubt does monte-carlo(MC) variation effect is less for a) device operating in subthreshold or -> Effect of vds variation reduces b) its vice-versa -> Effect of Vth (due to MC variation) brings mismatch hence effect is very bad. One point I was thinking that its also depends on kind of technology we are using. For present technologies sub-90nm nodes "vds" is always a part of current equations and hence there is no perfect strong inversion region, might be MC variation help in that case |
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