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Message started by Lilylily on Mar 9th, 2009, 7:46am

Title: a question about corner simulation
Post by Lilylily on Mar 9th, 2009, 7:46am

During corner simulation,what does "fast nmos" or "fast pmos" mean?
If I set the section of mos "the ff",must I set the sections of bjt,res,cap and other devices "the ff" simultaneously? Thanks!

Title: Re: a question about corner simulation
Post by raja.cedt on Mar 9th, 2009, 8:09am

hi,
   i feel it depends  strongly on the circuit.Lets say if you are using poly resistor it is independent on process,so in this case for any thing more or less you will get same result,whereas some circuits like biasing,less resistor  value  may gives worst condition.If you are not in a position to decide worst corner,do both simulations(fast nmos,less res and fast nmos ,high res).
Thank you,
Rajasekhar.

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