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Design >> Analog Design >> PNP base doping variations
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Message started by cmos.analogvala on Sep 17^th, 2009, 11:09am

Title: PNP base doping variations
Post by cmos.analogvala on Sep 17^th, 2009, 11:09am

I am designing Bandgap Bias gen circuit using UMC180 technology. I have following questions.

1. The process has only parasitic PNP BJT. How to consider variations in base(Nwell) doping ? The foundry provides only one model file for BJT with no variations information.

2. Which model parameters of BJT can vary due to process variations ? What is the amount of variations in these parameters ?

3. In all if I want to consider all the type of variations and make sure that the designed circuit works on silicon what all I should consider apart from checking the circuit for all MOS and Resistance variations given by their model files. ?

-CA