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Design >> Analog Design >> Gate shot noise in deep submicron technology
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Message started by roland on Feb 3^rd, 2010, 7:53pm

Title: Gate shot noise in deep submicron technology
Post by roland on Feb 3^rd, 2010, 7:53pm

Hi, I just started to use 65nm tech to design SC circuits. I found that the typical 1.2V MOSFET has much higher noise than thick oxide MOSFET(1.8/2.5V), typically about 5X for the integrated Noise of a SC gain stage. The major contributor in noise summary is the noise of gate leakage current. I was not familiar with this noise source before, and I found little reference matirials. Anyone can help me with this problem or give some reference? Thanks a lot!