The Designer's Guide Community Forum

The Designer's Guide Community Forum
https://designers-guide.org/forum/YaBB.pl
Simulators >> RF Simulators >> Device Noise Parameter Description
https://designers-guide.org/forum/YaBB.pl?num=1291827960

Message started by Upemba on Dec 8^th, 2010, 9:06am

Title: Device Noise Parameter Description
Post by Upemba on Dec 8^th, 2010, 9:06am

I run a pnoise SpectreRF simulation and I am not able to identify each noise contribution parameter reported. For instance: id stands for channel thermal noise, fn for flicker noise of MOS transistors. I am having additional parameters that I am not able to identify. Can someone help me to describe each noise paramter. Below is the list:
1. MOS transistors: what is rs and rd?
2. BJT transistors: what is ic, ib, rb
3. Resistors: what is rs? I thought rn was thermal noise of resistors.

Thank in advance for your answers

Title: Re: Device Noise Parameter Description
Post by sheldon on Dec 9^th, 2010, 6:45pm

Upemba,

Here are my guesses:

1) Thermal noise of the source and drain resistance: rs, rd
2) base and collector current shot noise: ib, ic
Thermal noise of the base resistance: rb
Note: there are additional terms for rc and re but their effect is
usually small
3) Noise for the source resistance, the noise of the port

Best Regards,

Sheldon

Title: Re: Device Noise Parameter Description
Post by Upemba on Dec 10^th, 2010, 3:38pm

Thank you