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Design >> RF Design >> RF Power Amplifier IC
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Message started by themaccabee on Jan 12^th, 2011, 2:00am

Title: RF Power Amplifier IC
Post by themaccabee on Jan 12^th, 2011, 2:00am

This is about a wide band integrated RF Power Amplifier

I was going through the data sheet of MWE6IC9100N & seen the two application notes mentioned i.e. AN1977 & AN1987.

I believe that the MWE6IC9100N includes a thermal tracking circuit inside consisting of a tracking FET .And this FET when supplied by a constant Vg in series with a RESISTOR will regulate the IDQ of the RF FET over temperature variations.

May be this is silly but I've a following doubt for you,

My question is that in addition to the internal thermal tracking FET system supplied by a constant VG through a series RESISTOR , is it necessary to have an additional bias control circuitry( Active bias compensation controller or current source bias controller) mentioned in AN1987 for MWE6IC9100N if we are intending to operate it over a range operating temperatures.If needed then why exactly is so?

Any help will be greatly appreciated
Thanks & Regards

Title: Re: RF Power Amplifier IC
Post by loose-electron on Jan 22^nd, 2011, 12:44pm

you need to contact the product engineering support group for the IC.

wrong forum

Title: Re: RF Power Amplifier IC
Post by feng lau on Feb 17^th, 2011, 6:55pm

Amplifiers have a quiescent operating point which will be affected by temperature changes.If amplifier is using in a very wide temperature range, its queescent operating point is changed with temperature.And the amplifter maybe work in a wrong conditions. It is necessary to have an additional temperature compensation circuit as AN1977 & AN1987 give out. :)