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Design >> Analog Design >> Best process for weak inversion design EKV model
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Message started by mixed_signal on Mar 22^nd, 2012, 5:59pm

Title: Best process for weak inversion design EKV model
Post by mixed_signal on Mar 22^nd, 2012, 5:59pm

Hi,

What is the best process for design in weak inversion? I mean which process is most accurately modelled in weak inversion?

Is the EKV model the best for weak inversion? If yes, which processes/technology are using EKV model for weak inversion and are reliable?

Title: Re: Best process for weak inversion design EKV model
Post by loose-electron on Mar 22^nd, 2012, 6:37pm

If you are trying to do micropower
design, then you want 2 things that I can think of:

- no gate leakage current
- transistors that have been properly modelled in the weak inversion regions and at micro currents.

Large geometry node, lets say 0.18 or even 0.25 micron or larger.

THis is thicker gate oxides and no get leakage due to that.

Transistor models will be what was created back then, you want BSIM 3.2 or newer.

Get foundry data on how the models were created.

Here read this:

http://chipdesignmag.com/display.php?articleId=438&issueId=16

I wrote that on the subject back around 2005