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Design >> RF Design >> Silicon on Insulator deep trench Isolation
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Message started by aaron_do on May 10^th, 2012, 6:36pm

Title: Silicon on Insulator deep trench Isolation
Post by aaron_do on May 10^th, 2012, 6:36pm

Hi all,

just wondering, for Silicon-on-Insulator technology, does a deep trench in combination with the buried oxide give perfect DC isolation? In other words, does the deep trench extend all the way to the buried oxide and prevent any leakage current?

thanks,
Aaron

Title: Re: Silicon on Insulator deep trench Isolation
Post by loose-electron on May 12^th, 2012, 8:40am

go get some specifics on the foundry process -

The SOI variants do a lot better than the DT isolation of bulk silicon, but you need the specifics of the foundry process.