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Design >> Analog Design >> low-vt device property
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Message started by yvkrishna on Nov 26^th, 2013, 11:20pm

Title: low-vt device property
Post by yvkrishna on Nov 26^th, 2013, 11:20pm

Hi,

lvt device is known for building high speed digital circuits, as the gate cap of the mos(switch) needs to charge to a smaller voltage for switching the state of the device(on/off).

but how can we show the same nature in terms of bandwidth (in terms of gm/cgs) another way to say that its a faster device.

I assume to a first order that when both low-vt and standard-vt device have nature (similar overdrive for a given current and just that vth is controlled with doping) - may be wrong?
OR some other proces parameter is controlled to make it faster?

Thanks,
yvkrishna

Title: Re: low-vt device property
Post by boe on Nov 27^th, 2013, 3:03am

Hi Yvkrishna,
the speed advantage you describe is a large-signal effect, the low-vt device does not need to be faster (in terms of small signal parameters like bandwidth) for that.

- B O E

Title: Re: low-vt device property
Post by yvkrishna on Dec 2^nd, 2013, 10:39pm

Thanks BOE.