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Design >> Analog Design >> Layout in < 180nm, substrate/well-tap recommendations
https://designers-guide.org/forum/YaBB.pl?num=1462484938

Message started by JoeW on May 5^th, 2016, 2:48pm

Title: Layout in < 180nm, substrate/well-tap recommendations
Post by JoeW on May 5^th, 2016, 2:48pm

Hi,

At a previous job, I saw a presentation that recommended normal guardrings and *no* area filling of substrate and nwell-taps in unused areas in technologies 180nm and lower. In these technologies, STI exists where active (diffusion) regions were not located.

My question/request is can someone point me to a paper or presentation that documents these recommendations (requirements) and why? I thought the reasoning was for either latch-up immunity or ESD concerns, but I don't recall. A web search has been fruitless so far.

Thanks, Joe