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https://designers-guide.org/forum/YaBB.pl Simulators >> Circuit Simulators >> Spectre / BSIM 4.7 MOS Parameter https://designers-guide.org/forum/YaBB.pl?num=1473354718 Message started by Blacksmith on Sep 8th, 2016, 10:11am |
Title: Re: Spectre / BSIM 4.7 MOS Parameter Post by Geoffrey_Coram on Sep 9th, 2016, 8:07am What simulator are you using? If you're using Spectre, you could do "spectre -help bsim4" and see what it reports for those operating-point parameters. However, I noticed that ide = -6.854p matches exactly with the back-annotation you showed for the drain terminal current, and ibe = 3.428p that for the body terminal current. idb is usually used for the drain-body junction current. |
Title: Re: Spectre / BSIM 4.7 MOS Parameter Post by Geoffrey_Coram on Sep 9th, 2016, 8:08am What about GIDL/GISL currents or Isub? |
Title: Re: Spectre / BSIM 4.7 MOS Parameter Post by Blacksmith on Sep 9th, 2016, 12:16pm Geoffrey_Coram wrote on Sep 9th, 2016, 8:07am:
I wasn't aware I could extract the parameters so easily :) It turns out that "id" is the "resistive drain current" whatever this means. It certainly isn't the current through the channel, since that's "ids". As previously suspected, "ide" is the total drain current. Either way, this doesn't answer the relatively speaking excessive drain current and where it's coming from. An explanation for this current, as a colleague highlighted, is the default value of gmin. In this case, 1/gmin is 1pΩ and the drain voltage is at ~3.8V; this amounts to ~3.8pA flowing through the drain 1/gmin resistor. Thanks for the help! |
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