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https://designers-guide.org/forum/YaBB.pl Design >> High-Power Design >> From GOX Reliability stand-point, is the VGB violation same as VBG violation? https://designers-guide.org/forum/YaBB.pl?num=1512835784 Message started by A Kumar R on Dec 9th, 2017, 8:09am |
Title: From GOX Reliability stand-point, is the VGB violation same as VBG violation? Post by A Kumar R on Dec 9th, 2017, 8:09am Hi Folks, The question is about the basic gate-oxide reliability concern. For example, for an nmos, if Vgate = 4 v and Vbulk = 0 v ....assume that since VGB >= 4 v we have stress on the gate. but, for the pmos, if Vgate = 0v and Vbulk = 4 v then VGB <= -4 v then also this is defined as stress on the gate. but why? my argument is that since the bulk is at 4 v and the gate is at 0v..does the gate really experiences the stress? bulk is much larger in thickness compared to the gate right? thanks. A |
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