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Simulators >> Circuit Simulators >> How to correctly simulate MOS charge injection ?
https://designers-guide.org/forum/YaBB.pl?num=1070751841

Message started by Orchid on Dec 6^th, 2003, 3:04pm

Title: How to correctly simulate MOS charge injection ?
Post by Orchid on Dec 6^th, 2003, 3:04pm

Hi,

The MOS model files provided by foundries often do not include the Non-Quasi-Static effect, and therefore do not yield correct results for charge injection effects. In the literature, some authors divide a MOS into many MOS's with smaller lengths to account for the NQS effect. Parameters for short channel effect (and still many others) have to be modified. With a HSPICE BSIM3 model file, would you please kindly teach me how to modify it ?

Thanks, :)

Title: Re: How to correctly simulate MOS charge injection
Post by skippy on Dec 8^th, 2003, 4:43pm

A circuit representation is presented in:

"A Large Signal Non-Quasi-Static MOS Model for RF Circuit Simulation", A.J. Scholten et. al. Proceedings of the 1999 International Electron Devices Meeting. pp 163-166.

It doesn't give you an input deck, but it appears to account for many high frequency effects and describes how the parameters were calibrated.