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Design >> RF Design >> Large signal model for a GaAsFET
https://designers-guide.org/forum/YaBB.pl?num=1100717024

Message started by etakacs on Nov 17^th, 2004, 10:43am

Title: Large signal model for a GaAsFET
Post by etakacs on Nov 17^th, 2004, 10:43am

My background is that I am a novice Verilog-A programmer. I have quite a bit of experience in RF design and simulation-primarily with Eagleware and ADS.

I am interested in modeling the non linear characteristics of a GaAs FET (or other microwave power transistor), and it seems that Verilog A is the way to accomplish this. The data typically provided in the data sheets is small signal Sparameters at 1 bias point, some Pout and efficiency vs Pin curves, sometimes an IP3 vs level plot and perhaps some IV curves as well. The absolute device maxima are also provided.

Is it possible to model the effects to the output power (compression effects), and the waveform distortion (voltage and current) as a function of input drive of a microwave transistor using Verilog-A when the typical data provided in data sheets is provided?

Is there any literature on the subject? I would like to use this non linear device model in Eagleware Genesys, which has a Verilog A compiler built in.

I would appreciate any help in fleshing this problem out.

Thanks