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https://designers-guide.org/forum/YaBB.pl Design >> Analog Design >> ion implantation for Vth adjustment https://designers-guide.org/forum/YaBB.pl?num=1112066624 Message started by analogic on Mar 28th, 2005, 7:23pm |
Title: ion implantation for Vth adjustment Post by analogic on Mar 28th, 2005, 7:23pm it is said in some book that "ion implantation for Vth adjustment" is done after the growth of gate oxide. is it true? will it degrade the quality of the gate oxide? Thanks. |
Title: Re: ion implantation for Vth adjustment Post by DReynolds on Mar 29th, 2005, 7:30am Analogic, ion implantation is done several times in .13um to adjust threshold (among other things). You can get normal vt, low vt and native devices..... no, it doesn't hurt the quality of the gate oxide. If you use the lower vt or native devices, be careful to understand how much they can vary before you commit to using them. David Reynolds |
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