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Other CAD Tools >> Physical Verification, Extraction and Analysis >> RCX for SOI technology
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Message started by Alef on Apr 7th, 2006, 1:09am

Title: RCX for SOI technology
Post by Alef on Apr 7th, 2006, 1:09am

Hi all! I have some problems with verifying SOI design, including MOS transistors with five terminals (common terminal for nmos and pmos - substrate under buried oxide). Step 1 in RCX procfile includes FOX and gate oxide and I can not include substrate (metal) and buried oxide (dielectric) under this layers. Without establishing connectivity to fifth terminal it's impossible to run RCX without errors. May be someone know any tool or method for describing SOI structure and parasitic extraction SOI design?

                                                                                            Best regards

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