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Modeling >> Semiconductor Devices >> Drain-Source asymmetry
https://designers-guide.org/forum/YaBB.pl?num=1173032865

Message started by mg777 on Mar 4^th, 2007, 10:27am

Title: Drain-Source asymmetry
Post by mg777 on Mar 4^th, 2007, 10:27am

I read somewhere that the drain and source of a submicron MOS transistor are not interchangeable because the wafer is angled during an implant. Can someone explain this?

I forgot where I read this. I thought I saw it in Taur + Ning's 'Fundamentals of Modern VLSI Devices', which in my opinion continues to provide the best exposition of submicron device physics for an analog designer.

M.G.Rajan

Title: Re: Drain-Source asymmetry
Post by vivkr on Mar 5^th, 2007, 3:00am

http://www.designers-guide.org/Forum/YaBB.pl?num=1165919635

Regards
Vivek

Title: Re: Drain-Source asymmetry
Post by mg777 on Mar 5^th, 2007, 3:11am

Vivek, thanks for the link. The entire thread made interesting reading.

Before posting I did try a search for "drain" on the forum's search box (top right), but it didn't return the thread you provided. I will send a note to the forum moderator.

M.G.Rajan