The Designer's Guide Community Forum

The Designer's Guide Community Forum
https://designers-guide.org/forum/YaBB.pl
Modeling >> Semiconductor Devices >> Any TCAD users here (device simulationg question)
https://designers-guide.org/forum/YaBB.pl?num=1255112129

Message started by esprit on Oct 9^th, 2009, 11:15am

Title: Any TCAD users here (device simulationg question)
Post by esprit on Oct 9^th, 2009, 11:15am

I'm running 2D Sentaurus device simulation and was attempting to do some 3D simulations with some sort of a diode setup.

Now, running 3D (and sometimes 2D) simulations using Poisson coupled with one or two continuity equations (electron and/or hole) takes a very long time. I was wondering if solving only Poisson equation will give me a good picture of how the outcome should look like. In other words, under what conditions solving Poisson equation only can be trusted?

Thanks,
Esprit

Title: Re: Any TCAD users here (device simulationg question)
Post by Maks on Oct 23^rd, 2009, 7:20pm

If you are simulating a diode, you can get a very accurate result from solving only Poisson equation if you are simulating a reverse bias condition (assuming you are not interested in reverse current simulation - which can never be trusted unless you do a thorough lifetime model calibration). You will get a zero current, and an accurate description of depletion effect.

In general if you do not solve electron and hole continuity (i.e. current transport) equations, you are (implicitly) assuming constant (coordinate-independent) quasi-Fermi potentials for electrons and holes, which means the conduction current is zero (both for electrons and holes). So, I guess that solving Poisson equation may be sufficient to simulate this sort of condition - reverse-biased p-n junction, MOS structure (C-V characteristics), structures with no electrons or holes, etc.

Title: \ Any TCAD users here (device simulationg question)
Post by rokisr on Jul 11^th, 2011, 2:39pm

Hello,
I am beginner in the Sentaurus TCAD and I am trying to simulation a piece of silicon with traps. And I have a problem: Sentaurus Device shows lack of convergence when traps are included. Even the step size is reduced to 1e-50 it does not converge :(.
Any help is appreciated.

-Rokis

Title: Re: Any TCAD users here (device simulationg question)
Post by nano-sid on Dec 25^th, 2013, 7:35pm

i m a beginner in sentaratus tcad .im currently working on Sram . Anybody kindly say me what are the standard sram dimensions need to program that in Tcad

Title: Re: Any TCAD users here (device simulationg question)
Post by Ria on Jul 21^st, 2016, 10:05am

Hi, I am using Advanced Sentaurus TCAD. I want to check volume inversion occuring in a DGFET. What models should I include in physics section of des.cmd file? or what changes I have to make in parameter file? Can anyone help me?