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Simulators >> Circuit Simulators >> Montecarlo simulations for Mismatch
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Message started by cmos.analogvala on Dec 6^th, 2009, 7:34am

Title: Montecarlo simulations for Mismatch
Post by cmos.analogvala on Dec 6^th, 2009, 7:34am

Hey all,
I have been performing montecarlo simulations using foundry specified model files for quite some time now. I am familiar with terms like global/local variations or process/mismatch simulations. My question is following.

The model file for motecarlo simulations of mistmatch in MOSFET, is written based on measured data of MOSFETs seperated by S. What is the typical value of S ?

I understand it depends on technology and foundry. I just want approximate range. I have a foundry specified model file but I the related dpocumentation does not say anything about separation between MOFETs considered for the mismatch models. I just want to know typical/approximate values.

-CA

Title: Re: Montecarlo simulations for Mismatch
Post by Riad KACED on Dec 7^th, 2009, 12:17am

Hi CA,

This is a technology/foundry related question and there is no generic answer for it. You better ask the foundry guys who provided you with the files/docs. They are the only people capable of an accurate answer I'm afraid. In fact, we can't tell an 'approximate' value as there are many transistor types (P/N/Power/Speed/Voltage ...) in many technology nodes (1um, .. 32nm, 22nm .. etc)

Cheers,
Riad.