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https://designers-guide.org/forum/YaBB.pl Measurements >> Other Measurements >> cmos nor2 static power https://designers-guide.org/forum/YaBB.pl?num=1280431909 Message started by Darock on Jul 29th, 2010, 12:31pm |
Title: cmos nor2 static power Post by Darock on Jul 29th, 2010, 12:31pm Hi all, I have a question regarding static power calculation for a or2 gate. Let say that A,B = 0 and only subthreshold leakage is observed. regarding the attach schematic, can i write : I_t1 = PMOS sat= µ.Cox.(W1/2L) (Vsg + Vt)2 I_t2 = PMOS sat= µ.Cox.(W2/2L) (Vsg + Vt)2 I_t3 = NMOS sub= µ.Cox.(W3/L) Vt2 e((Vgs-Vth)/nVt) I_t4 = NMOS sub= µ.Cox.(W4/L) Vt2 e((Vgs-Vth)/nVt) I_t5 = PMOS sub=µ.Cox.(W5/L) Vt2 e((Vgs-Vth)/nVt) I_t6 = NMOS sat= µ.Cox.(W6/2L) (Vgs - Vt)2 Please let me know if you think that these equation are correct, and also i m not sure about the way to add them. do i have to add them all to find the static power ? thank you for your time, David. ps : Let me know if you have an example of this kind of calculation |
Title: Re: cmos nor2 static power Post by rfcooltools.com on Aug 6th, 2010, 6:48pm Darock, To simplify you can approximate all trioded (not saturated) drain voltages as equivalent to their supply or ground respectively. The reason is that the subthresold current will be small and the I*R drop will be negligible. Second you can assume T3 and T4 to be the single device with the combined width. Third you will need the subthreshold equation with Vds included. Finally for the subthreshold devices |VDS|= vsupply VGS=0 http://rfcooltools.com |
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