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Measurements >> Other Measurements >> cmos nor2 static power
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Message started by Darock on Jul 29th, 2010, 12:31pm

Title: cmos nor2 static power
Post by Darock on Jul 29th, 2010, 12:31pm

Hi all,

I have a question regarding static power calculation for a or2 gate.
Let say that A,B = 0 and only subthreshold leakage is observed.

regarding the attach schematic, can i write :

I_t1 = PMOS sat= µ.Cox.(W1/2L) (Vsg + Vt)2
I_t2 = PMOS sat= µ.Cox.(W2/2L) (Vsg + Vt)2
I_t3 = NMOS sub= µ.Cox.(W3/L) Vt2 e((Vgs-Vth)/nVt)
I_t4 = NMOS sub= µ.Cox.(W4/L) Vt2 e((Vgs-Vth)/nVt)
I_t5 = PMOS sub=µ.Cox.(W5/L) Vt2 e((Vgs-Vth)/nVt)
I_t6 = NMOS sat= µ.Cox.(W6/2L) (Vgs - Vt)2

Please let me know if you think that these equation are correct,
and also i m not sure about the way to add them.

do i have to add them all to find the static power ?

thank you for your time,

David.



ps : Let me know if you have an example of this kind of calculation

Title: Re: cmos nor2 static power
Post by rfcooltools.com on Aug 6th, 2010, 6:48pm

Darock,

To simplify you can approximate all trioded (not saturated) drain voltages as equivalent to their supply or ground respectively. The reason is that the subthresold current will be small and the I*R drop will be negligible.  Second you can assume T3 and T4 to be the single device with  the combined  width.   Third you will need the subthreshold equation with Vds included.
Finally for the subthreshold devices
|VDS|= vsupply
VGS=0

http://rfcooltools.com

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