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Modeling >> Semiconductor Devices >> MOSFET device
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Message started by mary on May 13^th, 2012, 1:55pm

Title: MOSFET device
Post by mary on May 13^th, 2012, 1:55pm

Hi,

I have a problem I have to solve and I am stuck It is

A nMOSFET has HfO2 as gate oxide ((Εox )/(Ε0 ) = 16, Tox = 10 nm) and a doping concentration Na = 10^17 cm^-3 in the body. The gate material is TiN ( Φm = 4.61 eV ). Calculate Vt.

I have come to the conclusion that Vt = Vfb + Φst - Qdep/Coxe , but how do I find Qdep? And is Φst the same as Φm?

Thank you in advance!