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Modeling >> Semiconductor Devices >> Dark Current modeling of Photodiode
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Message started by anas.iftikhar on Mar 3^rd, 2015, 8:25am

Title: Dark Current modeling of Photodiode
Post by anas.iftikhar on Mar 3^rd, 2015, 8:25am

Hi,
I am modelling dark current of photo-diode in VerliogAMS and going through this book Optical Semiconductor Devices by Mitsuo Fukuda. Here, the dependence of dark current is discussed such as Diffusion Current, Generation-Recombination etc. There are two major device parameters knows as Trap Density and Carrier Capture Cross-Section are discussed along with the mathematical expressions.
I need few test values of these parameters so I could model the dark current. If someone has more literature on these parameters for photo-diode please share.
I have shared snap shots of those pages where these parameters are discussed.

Thank you.

Title: Re: Dark Current modeling of Photodiode
Post by Geoffrey_Coram on Mar 19^th, 2015, 6:45am

Did you try a search at IEEExplore for "dark current" ? (Do you have access to IEEE publications?)

Title: Re: Dark Current modeling of Photodiode
Post by anas.iftikhar on Apr 5^th, 2015, 2:54am

No I don't have access to them. Can someone please share any literature regarding these parameters?

Title: Re: Dark Current modeling of Photodiode
Post by Geoffrey_Coram on Apr 28^th, 2015, 6:13pm

It's against IEEE's terms of use to share that information with you.

You can try a Google Scholar search; sometimes the authors have posted the article on their own web site.