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Design >> Mixed-Signal Design >> Bulk Fin Fet process with no DNW
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Message started by neoflash on Nov 24^th, 2015, 10:26am

Title: Bulk Fin Fet process with no DNW
Post by neoflash on Nov 24^th, 2015, 10:26am

Hi,

I am wondering how the substrate noise will impact FinFet in bulk Fin Fet process without DNW.

One side, without DNW, all digital noise will come to analog part without isolation through substrate.

On the other hand, bulk Finfet has little to no body bias effect, thus more robust again substrate noise.

Therefore, how is the overall substrate noise rejection in bulk fin fet process?

Thanks,
Neo

Title: Re: Bulk Fin Fet process with no DNW
Post by loose-electron on Nov 24^th, 2015, 11:29am

interesting question - what are the parasitics to bulk models?

Substrate noise tends to be a misnomer however, most people talking substrate noise are actually seeing something else.

http://electronicdesign.com/analog/noise-reduction-crucial-mixed-signal-asic-design-success

give that a read, wrote that 15 years ago but the basics have not changed

Title: Re: Bulk Fin Fet process with no DNW
Post by neoflash on Jan 20^th, 2016, 10:30am

Nice article.

Title: Re: Bulk Fin Fet process with no DNW
Post by loose-electron on Feb 18^th, 2016, 11:58am

neoflash wrote on Jan 20^th, 2016, 10:30am:

Nice article.

Thanks, the voltages are lower and the transistors are smaller but its still the same stuff