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Design >> RF Design >> RF Inductor Layout
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Message started by MWJ1975 on Feb 15^th, 2019, 6:56pm

Title: RF Inductor Layout
Post by MWJ1975 on Feb 15^th, 2019, 6:56pm

Hi,

I am currently doing a layout for an RF 2.4GHz receiver in GF 130nm CMOS technology using Cadence Virtuoso. I have begun planning my layout and I have some general questions regarding the inductors.

I have two single-ended inductors about 18nH (pretty large area, an outer diameter of 300um for both of them) which are connected to a cross-coupled CMOS pair to form the differential LC oscillator. There is also a varactor across the pair for frequency tuning.

I am trying to determine a reasonable space between the inductors and the varactor/nfets. In the training document, the only information I found was the spacing between the bond pads and the inductor. Reading Alan Hastings book I couldn't really find any information on this. The inductors are at the highest metal levels (MA, E1). Could anyone help assist with the following questions:

1) Related material for inductor layout

2) General spacing and area rules besides the DRC

Thank you.