Hi,

I'm planing to reorganize our model file structure,
with the target that every mos transistor device should call
an inline subckt.
This makes it easier to deal with different requirements
like monte carlo analysis or gate leakage simulation, you
can use the same model name and just change the model file
section regarding simulation purpose.

The question now is how does this method affect the speed
of the simulator 'Spetre'?
Did someone had experience with this?
Using

inline subckt nch ( d g s b )
 parameters ...
 
n12 ( d g s b ) nch_core ...

model nch_core bsim3v3  {
...
}

Rather than just

model nch bsim3v3  {
...
}

Any thoughts?

Bernd