aaron_do
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Hi RFICDUDE,
thanks for the help. At the moment I've defined a (rather poor) metal conductor which sits inside the substrate and is supposed to approximate p-diffusion. I also defined vias to contact the conductor.
Ultimately what I'm actually trying to do is to get a good model for an n-well diode. The n-well diode will have p-diffusion nearby, but now I'm not sure how I can define the n-well. Seems like I need to define some sort of insulator layer for a conductor to sit inside. Its giving me a massive headache. As for the nonlinear part of the diode, I'm just going to use an ideal diode circuit model.
Regarding the grounding, it is just a traditional chip with a ground plane underneath, so I guess the default simulation method is ok.
Sorry if I didn't define my original question properly, but I didn't want to add unnecessary information, and I initially overlooked the n-well part of the problem.
thanks, Aaron
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