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IC Design POST-DOCTORAL POSITION for MIT-NTU collaboration in Singapore (Read 4730 times)
NTU Boon
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IC Design POST-DOCTORAL POSITION for MIT-NTU collaboration in Singapore
Dec 04th, 2011, 9:15pm
There is an opening in MITís Singapore research center (SMART) for post-doctoral fellow in the
area of Radio Frequency Integrated Circuit (RFIC) Design using novel substrate engineering to enable novel combination of group-IV and III-V hetero-structures on large area Si substrate as shown as the example in Figure 1.
This project is funded by the Singapore National Research Foundation through the SMART Center in Singapore. You have the opportunity to work with PIís from MIT, NTU and NUS, as well as a larger group of researchers in the low energy electronics system program. Work Location: Singapore.


A good PhD in electronic, electrical engineering or related field is requried. Prior experience with GaN (or any other III-V)  RFIC circuit design is required. Knowledge in CMOS circuit design is a plus. You are expected to work independently and meet regularly with the project PIís. You are expected to track the project progress and report your findings in journals/conferences. The appointment is for a 2-year term in the first instance, with possible renewal for another 2-3 years upon satisfactory performance.
Knowledge in circuit simulator: Cadence or ADS or HFSS.
Knowledge in Model in GaN (or any other III-V) or CMOS.
This is an IC design job. Reply if only you have strong background (PhD) in IC design.


Please send a cover letter and updated resume (highlighting your technical expertise and related publications) to Assist. Prof. Chirn Chye Boon ( Projected starting date is in the first quarter of 2012.
Application closes when the position is filled or until December 2012.
Information regarding LEES in SMART:
Information regarding SMART:
Professor Boonís Web Site:
Information about CREATE:
Information about SMART building:
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