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Hi ,all The following question is about tsmc 0.13um RF process 1. Do the corner of core device and IO device has some relationship? For example, if nmos1v goes to "tt" corner, then nmos3v will also go to "tt" corner? Or the nmos1v and nmos3v's corner has no correlation? 2. Please describe the corner relationship between mos_var and core device "nmos1v, pmos1v". For example, if nmos1v goes to "ss" corner, then mos_var will also go to "ss" corner ? 3.Please describe the corner relationship between bjt devices "vpnp, npn" and core device "nmos1v, pmos1v". For example, if nmos1v goes to "ss" corner, then vpnp will also go to "ss" corner ? 4. Please describe the corner relationship between diode devices "diodep,dioden" and core device "nmos1v, pmos1v". For example, if nmos1v goes to "ss" corner, then diodep will also go to "ss" corner ? 5. Please describe the corner relationship between rphpoly and rphriply; between rphpoly and rnhpoly; between rphpoly and rplpoly. For example, if rphpoly goes to "ss" corner, then rphripoly will also go to "ss" corner ?
Thank you.
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