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a question about ft (Read 4183 times)
frankaurora
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a question about ft
Apr 28th, 2006, 9:34am
 
to a given process such as 0.18u cmos,if L is a definite value,i think ft is constant,but some book say ft depend on bais condition,am i wrong?

thanks for replying Smiley
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milkdragon
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Re: a question about ft
Reply #1 - Apr 28th, 2006, 12:44pm
 
wt=gm/Cgs
where gm is porortional to your sqrt(Id)

So you will see ft change with bias
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Visjnoe
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Re: a question about ft
Reply #2 - Apr 29th, 2006, 4:59am
 
Hello,


ft ~ tech_const × (Vgs-Vt)/L2

So, ft only depends on the overdrive voltage of your device (bias) and its length. High frequency performance thus requires minimal length and large Vgs-Vt.

Kind Regards,

Peter
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frankaurora
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Re: a question about ft
Reply #3 - Apr 29th, 2006, 5:38am
 
but refer to Tomas Lee book,it says in short-channel device wt≈const*Esat/L(saturation),so wt is independent of bias?
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Visjnoe
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Re: a question about ft
Reply #4 - May 1st, 2006, 2:14am
 

Hi Frank,


the statement in Lee's book is correct, but it describes ft when the transistor is operating in velocity saturation,
so the dependency on Vgs-Vt disappears. This effect becomes important for deep-submicron technologies and is less apparent for older technologies (in which the formula I posted previously is valid).


Kind Regards

Peter
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frankaurora
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Re: a question about ft
Reply #5 - May 6th, 2006, 4:20am
 
:D
i got it,thanks a lot!
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