hello all...

can someone suggest a book(s) that talks about modeling/device parameters of HBT or BJT (in silicon) in detail? i'm not really looking for hardcore device physics book but like many RF/analog IC books' first few chapters are on device physics and modeling.  but the problem is either they don't go in detail like gray and meyer or they mostly talk about MOSFET parameters.  For example, and this's just a basic example, you can easily find chapters that talk about MOSFET gm vs. temp., Cgs vs. Vgs, Cds vs. Vds, Cgd vs. Vds, temperature dependencies, etc, etc.  but, i haven't come across chapter where gm, Cpi, Cci or Cmu are discussed verses Vce or Ic or Vbe, temperature, etc.  these things might seem trivial to some (especially senior designers) but are important and it's hard to simulate them in a CAD tool.

i hope someone has come across a book that has what i'm looking for.  again, i want to emphasize that i'm not looking for hardcore device physics, don't really care about sidewalls, quantum wells, doping profiles, mobility discussions, etc---mostly want discussion through designer prespective.  thanks

hi...in fact, this is the one book i looked at but an old second edition of it.  it doesn't have what i'm looking for....thanks for the suggestion, though.