I am designing an LDO to produce a regulated 1.8V from an unregulated 3V supply with 50 mA as max current. For this the W/L of the Mosfet turns out to be around 2000.   For compromising this making the transistor to go in linear region will reduce the W/L drastically to around 100 but increase the gain of the error amplifier. So which one is a better design, use larger transistor or use the FET in linear region. Will i get any performance degradation if i use the FET in triode region?